Power Transistors
1
Publication date: September 2003
SJD00246BED
2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1416
Features
High forward current transfer ratio h
FE
which has satisfactory linearity.
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
60
V
Emitter-base voltage (Collector open)
V
EBO
6
V
Collector current
I
C
3
A
Peak collector current
I
CP
5
A
Collector power dissipation
P
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 30 mA, I
B
= 0
60
V
Base-emitter voltage
*1
V
BE
V
CE
= 4 V, I
C
= 3 A
1.8
V
Collector-emitter cutoff current (Emitter-base short)
I
CES
V
CE
= 60 V, V
BE
= 0
200
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 30 V, I
B
= 0
300
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 6 V, I
C
= 0
1
mA
Forward current transfer ratio
h
FE1
*2
V
CE
= 4 V, I
C
= 1 A
40
250
h
FE2
*1
V
CE
= 4 V, I
C
= 3 A
10
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 3 A, I
B
= 0.375 A
1.2
V
Transition frequency
f
T
V
CE
= 5 V, I
E
= - 0.1 A, f = 200 MHz
220
MHz
Turn-on time
t
on
I
C
= 1 A, I
B1
= 0.1 A, I
B2
= - 0.1 A
0.5
s
Storage time
t
stg
2.5
s
Fall time
t
f
0.4
s
7.5
0.2
0.65
0.1
0.7
0.1
1.15
0.2
2.5
0.2
2.5
0.2
0.85
0.1
1.0
0.1
0.7
0.1
1.15
0.2
0.5
0.1
1
0.8 C
2
3
0.4
0.1
4.5
0.2
0.8 C
0.8 C
3.8
0.2
16.0
1.0
10.8
0.2
2.05
0.2
90
2.5
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
h
FE1
40 to 90
70 to 150
120 to 250
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and semiconductors described in this material
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2003 SEP
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